dcr 3900 h 65 phase control thyristor ds6064 - 1 april 201 1 (ln28304 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v d s m and v r s m v conditions dcr 3900h65 dcr3900h62 dcr3900h58 DCR3900H54 65 00 62 00 5 8 00 54 00 t vj = - 40c to 1 10 c, i drm = i rrm = 7 00 ma, v drm , v rrm t p = 10ms, v d r m & v r r m = v d s m & v r s m - 9 00 v respectively lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr 3900 h 65 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 65 00 v i t(av) 3900 a i tsm 71 0 00 a dv/dt* 2 000 v/s di/dt 2 0 0 a/s * higher dv/dt selections available fig. 1 package outline outline type code: h (see package details for further information)
semiconductor dcr 3900 h 65 2 / 9 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 3900 a i t(rms) rms value - 6120 a i t continuous (direct) on - state current - 5510 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 1 10 c 71 .0 ka i 2 t i 2 t for fusing v r = 0 25.21 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0 0 4 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.0 0 08 c/w t vj virtual junction temperature blocking v drm / vrrm - 40 1 10 c t stg storage temperature range - 40 140 c f m clamping force 110 1 30 kn
semiconductor dcr 3900 h 65 3 / 9 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 1 10 c - 7 00 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 1 10 c, gate open 2 000 - v/s di/dt rate of rise of on - state current from 67% v drm to 4 000a repetitive 50hz - 2 0 0 a/s gate source 30v, 10 ? , non - repetitive - 1000 a/s t r < 0.5s, t j = 1 10 c v t on - state voltage i t = 3 0 00a, t case = 1 10 c 1. 69 v v t(to) threshold voltage t case = 1 10 c - 1. 13 v r t on - state slope resistance t case = 1 10 c - 0. 185 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3.0 s t r = 0.5s, t j = 25c t q turn - off time t j = 1 10 c, v r = 100v, di/dt = 1.5 a/s, - 10 00 s dv dr /dt = 20v/s linear to 67% v drm q s stored charge i t = 2 000a, tp = 1000us,t j = 1 10 c, di/dt = 1 .5 a/s, - 5750 c i rr reverse recovery current - 95 a i l latching current t j = 25c, - 1 a i h holding current t j = 25c, - 200 ma gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 2.6 v v gd gate non - trigger voltage at 4 0% v drm, t case = 1 10 c tbd v i gt gate trigger current v drm = 5v, t case = 25c 4 00 ma i gd gate non - trigger current at 4 0% v drm, t case = 1 10 c tbd ma
semiconductor dcr 3900 h 65 4 / 9 www.dynexsemi.com curves v tm equation v tm = a + bln (i t ) + c.i t +d. ? i t where a = 0.371622 b = 0.107412 c = 0.000147685 d = 0.00021084 t hese values are valid for t j = 1 10 c fig. 2 maximum &minimum on - state characteristics i i (s) r thi ( c/k w) 1 0.9692 2.695 2 0. 1332 0.814 3 0. 0177 0.33 4 0. 0042 0.162 fig. 3 maximum (limit) transient thermal im pedance C junction to case (c/ w) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.6 1.2 1.8 2.4 3 instantaneous on - state current, i t - (a) instantaneous on - state voltage,v t - (v) tj=25 c tj=110 c 0 0.001 0.002 0.003 0.004 0.005 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? n i t thi thjc i e r t r 1 1 ?
semiconductor dcr 3900 h 65 5 / 9 www.dynexsemi.com fig. 4 on - state power dissipation C sine wave fig. 5 maximum permissible case temperature, double side cooled C sine wave fig. 6 maximum permissible case temperature, double side cooled C rectangular wave fig. 7 on - state power dissipation C rectangular wave 0 4000 8000 12000 16000 20000 0 1000 2000 3000 4000 mean power dissipation - (w) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 maximum case temperature, t case - ( c) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 maximum case temperature, tcase - ( c) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 4000 8000 12000 16000 20000 0 1000 2000 3000 4000 mean power dissipation - (w) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor dcr 3900 h 65 6 / 9 www.dynexsemi.com fig. 8 multi - cycle surge current fig. 9 single - cycle i 2 t fig. 10 stored charge vs di/dt fig. 11 reverse recovery current vs di/dt 20.0 40.0 60.0 80.0 100.0 1 10 100 surge current, i tsm - (ka) number of cycles conditons: t case =110 c v r =0 pulse width = 10ms 10.00 20.00 30.00 1 10 i 2 t (ma 2 s) pulse width, t p - (ms) conditons: t case =110 c v r =0 half - sine wave 4000 8000 12000 16000 20000 24000 28000 32000 36000 40000 1 10 100 stored charge, q s - (uc) rate of decay of on - state current, di/dt - (a/us) conditons: t j =110 c i t =2000a vr=0 0 200 400 600 800 1000 1200 1400 1600 1 10 100 reverse recovery current, i rr - (a) rate of decay of on - state current, di/dt - (a/us) conditons: t j =110 c i t =2000a v r =0
semiconductor dcr 3900 h 65 7 / 9 www.dynexsemi.com fig . 10 gate characteristics a is recommended triggering area. b is unreliable triggering area. c is recommended gate load line. fig .1 1 gate characteristics 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 0 50 100 150 200 250 300 350 400 450 500 gate trigger voltage, v gt - (v) gate trigger current i gt , - (ma) tj=25 c tj=110 c upper limit tj= - 40 c lower limit 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 1.0 2.0 3.0 4.0 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) b c a p gm =20w
semiconductor dcr 3900 h 65 8 / 9 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: h fig.1 2 package outline
semiconductor dcr 3900 h 65 9 / 9 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any war ning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the info rmation is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a pro duct failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even whe n disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature produc t failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this m ay include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in f ire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate produc t status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been appr oved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor l imited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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